Growth of vertically aligned arrays of carbon nanotubes for high field emission
نویسندگان
چکیده
منابع مشابه
Growth of vertically aligned arrays of carbon nanotubes for high field emission
Vertically aligned multi-walled carbon nanotubes have been grown on Ni-coated silicon substrates, by using either direct current diode or triode plasma-enhanced chemical vapor deposition at low temperature (around 620 °C). Acetylene gas has been used as the carbon source while ammonia and hydrogen have been used for etching. However densely packed (∼ 10 cm ) CNTs were obtained when the pressure...
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A field emission vacuum switch using vertically aligned carbon nanotubes grown by a direct current plasma enhanced chemical vapor deposition is reported. Cathodes with optimized field emission properties were evaluated in diode configuration as a test vehicle for the construction of a vacuum power three terminal triode device. Limiting factors such as space charge effects involved with high cur...
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A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-termi...
متن کاملGrowth and field emission properties of vertically aligned carbon nanofibers
Vertically aligned carbon nanofibers sVACNFsd were synthesized on Ni-coated Si substrates using a dc plasma-enhanced chemical-vapor deposition system. The size of the Ni islands used as catalyst to grow the VACNFs was formed by both thermal annealing and laser processing on thin metal layers. It was observed that the diameter of the carbon nanofibers is strongly dependent on the initial Ni isla...
متن کاملHigh-rate low-temperature growth of vertically aligned carbon nanotubes.
We report the low-temperature growth of vertically aligned carbon nanotubes (CNTs) at high growth rates by a photo-thermal chemical vapour deposition (PTCVD) technique using a Ti/Fe bilayer film as the catalyst. The bulk growth temperature of the substrate is as low as 370 °C and the growth rate is up to 1.3 µm min(-1), at least eight times faster than the values reported by traditional thermal...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2008
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.06.089